Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation

Abstract At the core of theoretical framework ferroelectric field-effect transistor (FeFET) is thermodynamic principle that one can determine equilibrium behavior (FERRO) systems using appropriate potential. In literature, it often implicitly assumed, without formal justification, Gibbs free energy potential and impact charge accumulation be neglected. this Article, we first formally demonstrate Grand Potential to analyze perfectly coherent uniform FERRO-systems. We only reduces for non-conductive Consequently, always required charge-conducting at FERRO interface increases hysteretic device characteristics. Lastly, a best-case upper limit defect density D FI identified.